Structural modifications and non-monotonic carrier concentration in Bi2Se0.3Te2.7 by reversible electrochemical lithium reactions

被引：18

作者：

Chen, Jikun ^{[1
]}

Zhou, Xiaoyuan ^{[2
]}

Uher, Ctirad ^{[2
]}

Shi, Xun ^{[1
]}

Jun, Jin ^{[1
]}

Dong, Hongliang ^{[1
]}

Li, Yulong ^{[1
]}

Zhou, Yanfei ^{[1
]}

Wen, Zhaoyin ^{[1
]}

Chen, Lidong ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Mat Energy Convers, Shanghai 200050, Peoples R China

[2] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

来源：

ACTA MATERIALIA | 2013年 / 61卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Thermoelectric; Carrier transportation; Nanostructure; Lithium reaction; Bismuth chalcogenides; THERMOELECTRIC PERFORMANCE; BISMUTH TELLURIDE; FIGURE; INTERCALATION; ENHANCEMENT; NANOTUBES; MERIT;

D O I：

10.1016/j.actamat.2012.11.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reversible electrochemical lithium intercalation/deintercalation reactions have been applied to integrally modify the thermoelectric performance of Bi2Se0.3Te2.7 compounds. The carrier concentration of Bi2Se0.3Te2.7 has been precisely controlled experimentally through the adjustment of the residual lithium content. The variations of electronic transport properties of LixBi2Se0.3Te2.7, including electrical conductivity, Seebeck coefficient and carrier concentration, as a function of the intercalated lithium amount (x), show a special non-monotonic P-type to N-type doping trend. This variation is caused by the competition of two mechanisms controlling the carrier concentration: (i) decreasing of the Se/Te ratio through a Li-Se reaction that reduces the amount of the Te-Bi or Se-Bi antisite defects and therefore the electron concentration; (ii) n-type doping by lithium that provides the electron. Moreover, the nanoparticle exfoliation during lithium intercalation and deintercalation reactions leads to the formation of an internal nanocrystalline composite structure which effectively reduces the lattice thermal conductivity. Through an integral modification of both electrical and thermal transport properties, the maximum ZT value of LixBi2Se0.3Te2.7 was improved by nearly 25%. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：1508 / 1517

页数：10

共 39 条

[11] EFFECT OF QUANTUM-WELL STRUCTURES ON THE THERMOELECTRIC FIGURE OF MERIT [J].

HICKS, LD ;

DRESSELHAUS, MS .

PHYSICAL REVIEW B, 1993, 47 (19) :12727-12731

[12] THERMOELECTRIC FIGURE OF MERIT OF A ONE-DIMENSIONAL CONDUCTOR [J].

HICKS, LD ;

DRESSELHAUS, MS .

PHYSICAL REVIEW B, 1993, 47 (24) :16631-16634

[13] Enhanced thermoelectric performance of rough silicon nanowires [J].

Hochbaum, Allon I. ;

Chen, Renkun ;

Delgado, Raul Diaz ;

Liang, Wenjie ;

Garnett, Erik C. ;

Najarian, Mark ;

Majumdar, Arun ;

Yang, Peidong .

NATURE, 2008, 451 (7175) :163-U5

[14] Superconductivity in CuxBi2Se3 and its Implications for Pairing in the Undoped Topological Insulator [J].

Hor, Y. S. ;

Williams, A. J. ;

Checkelsky, J. G. ;

Roushan, P. ;

Seo, J. ;

Xu, Q. ;

Zandbergen, H. W. ;

Yazdani, A. ;

Ong, N. P. ;

Cava, R. J. .

PHYSICAL REVIEW LETTERS, 2010, 104 (05)

[15] Cubic AgPbmSbTe2+m:: Bulk thermoelectric materials with high figure of merit [J].

Hsu, KF ;

Loo, S ;

Guo, F ;

Chen, W ;

Dyck, JS ;

Uher, C ;

Hogan, T ;

Polychroniadis, EK ;

Kanatzidis, MG .

SCIENCE, 2004, 303 (5659) :818-821

[16] Formation of Sb2Te3 Widmanstatten precipitates in thermoelectric PbTe [J].

Ikeda, Teruyuki ;

Ravi, Vilupanur A. ;

Snyder, G. Jeffrey .

ACTA MATERIALIA, 2009, 57 (03) :666-672

[17] Vacancy site occupation by Co and Ir in half-Heusler ZrNiSn and conversion of the thermoelectric properties from n-type to p-type [J].

Kimura, Yoshisato ;

Tanoguchi, Toshiyasu ;

Kita, Takuji .

ACTA MATERIALIA, 2010, 58 (13) :4354-4361

[18] Enhancement of Thermoelectric Figure-of-Merit by a Bulk Nanostructuring Approach [J].

Lan, Yucheng ;

Minnich, Austin Jerome ;

Chen, Gang ;

Ren, Zhifeng .

ADVANCED FUNCTIONAL MATERIALS, 2010, 20 (03) :357-376

[19] Structure Study of Bulk Nanograined Thermoelectric Bismuth Antimony Telluride [J].

Lan, Yucheng ;

Poudel, Bed ;

Ma, Yi ;

Wang, Dezhi ;

Dresselhaus, Mildred S. ;

Chen, Gang ;

Ren, Zhifeng .

NANO LETTERS, 2009, 9 (04) :1419-1422

[20] High performance InxCeyCo4Sb12 thermoelectric materials with in situ forming nanostructured InSb phase [J].

Li, Han ;

Tang, Xinfeng ;

Zhang, Qingjie ;

Uher, Ctirad .

APPLIED PHYSICS LETTERS, 2009, 94 (10)

← 1 2 3 4 →