Modeling the electrical characteristics of TIPS-pentacene thin-film transistors: Effect of contact barrier, field-dependent mobility, and traps

被引：71
作者：
Gupta, Dipti [1 ]
Jeon, Namho [1 ]
Yoo, Seunghyup [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
来源：
ORGANIC ELECTRONICS | 2008年 / 9卷 / 06期
关键词：
TIPS-pentacene; Organic thin-film transistor; Device simulation; Contact barrier; Poole-Frenkel dependence; Acceptor traps; Interface charge;
D O I：
10.1016/j.orgel.2008.08.005
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The device characteristics of organic thin-film transistors (OTFT) fabricated using tris-isopropylsilylethynyl (TIPS)-pentacene are analyzed with the help of a two-dimensional physics-based numerical simulation. The model incorporates contact barrier at a metal-semiconductor interface, field-dependent mobility, and trap distribution in TIPS-pentacene films and at dielectric-semiconductor interface. The Poole-Frenkel type field-dependence of mobility is included in addition to the contact barrier height of 0.38 eV to describe the non-ideal behavior in the linear region of the output characteristics. An account of the transfer characteristics and its hysteresis behavior is completed in both below- and above-threshold region upon consideration of the presence of acceptor-like traps of an exponential distribution in TIPS-pentacene films and positive trapped charges at dielectric-semiconductor interface. The obtained device parameters not only match the electrical characteristics but also give one an insight on the charge injection, transport, and trap properties of TIPS-pentacene from the perspectives of TFT operation. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1026 / 1031
页数：6
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