Simulation investigation of double-gate CNR-MOSFETs with a fully self-consistent NEGF and TB method

被引：20

作者：

Guan, Ximeng ^{[1
]}

Zhang, Ming ^{[1
]}

Liu, Qiang ^{[1
]}

Yu, Zhiping ^{[1
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419058

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carbon nanoribbon (CNR) double-gate (DG) MOSFETs are simulated using fully self-consistent non-equilibrium Green's Function (NEGF) approach and tight-binding method (TB). Transfer and output characteristics, as well as subthreshold slope for various channel length and width are reported. DIBL and SCE effects are quantitatively evaluated and approaches to improving gate controllability are discussed.

引用

页码：761 / 764

页数：4

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