Effects of BCl3 addition to Cl2 gas on etching characteristics of GaN at high temperature

被引：11

作者：

Tanide, Atsushi ^{[1
]}

Nakamura, Shohei ^{[1
]}

Horikoshi, Akira ^{[1
]}

Takatsuji, Shigeru ^{[1
]}

Kohno, Motohiro ^{[1
]}

Kinose, Kazuo ^{[1
]}

Nadahara, Soichi ^{[1
]}

Ishikawa, Kenji ^{[2
]}

Sekine, Makoto ^{[2
]}

Hori, Masaru ^{[2
]}

机构：

[1] SCREEN Holdings Co Ltd, Fushimi Ku, 322 Furukawa Cho, Kyoto 6128486, Japan

[2] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2019年 / 37卷 / 02期

关键词：

INDUCED DAMAGE; THIN-FILMS; PLASMA; CL-2/BCL3; FABRICATION; RECOVERY;

D O I：

10.1116/1.5082345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gallium nitride films were etched at 400 degrees C and 20 Pa with a radio-frequency-generated Cl-2-BCl3 mixed plasma. While dog-legged profiles were obtained by plasma etching using pure Cl-2, straight sidewall shapes were achieved through BCl3 gas addition into the Cl-2 plasma by suppressing the plasma-induced damage on the etched surface. Etching by-products containing boron on the etched surface affected the etch rate. Smooth etched profiles were obtained by controlling the redeposition of by-products of boron and chlorine compounds, particularly for substrate temperatures above 230 degrees C. Published by the AVS.

引用

页数：6

共 50 条

[1] Dry etching characteristics of GaN using Cl2/BCl3 inductively coupled plasmas
Zhou, Shengjun
Cao, Bin
Liu, Sheng
APPLIED SURFACE SCIENCE, 2010, 257 (03) : 905 - 910
[2] Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3
Gryglewicz, J.
Oleszkiewicz, W.
Ramiaczek-Krasowska, M.
Szyszka, A.
Prazmowska, J.
Paszkiewicz, B.
Paszkiewicz, R.
Tlaczala, M.
MATERIALS SCIENCE-POLAND, 2011, 29 (04): : 260 - 265
[3] Temperature dependence on dry etching of Al2O3 thin films in BCl3/Cl2/Ar plasma
Yang, Xue
Kim, Dong-Pyo
Um, Doo-Seung
Kim, Gwan-Ha
Kim, Chang-Il
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2009, 27 (04): : 821 - 825
[4] Removal of Anodic Aluminum Oxide Barrier Layer on Silicon Substrate by using Cl2/BCl3 Neutral Beam Etching
Yeon, J. K.
Lim, W. S.
Park, J. B.
Kwon, N. Y.
Kim, S. I.
Min, K. S.
Chung, I. S.
Kim, Y. W.
Yeom, G. Y.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (05) : D254 - D258
[5] Preferential crystal orientation etching of GaN nanopillars in Cl2 plasma
Jaloustre, Lucas
Ackermann, Valentin
De Mello, Saron Sales
Labau, Sebastien
Petit-Etienne, Camille
Pargon, Erwine
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 165
[6] Fabrication of an AIN ridge structure using inductively coupled Cl2/BCl3 plasma and a TMAH solution
Okumura, Hironori
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (02)
[7] Influence of Ge and Si on reactive ion etching of GaN in Cl2 plasma
Urushido, T
Yoshida, H
Miyake, H
Hiramatsu, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (1AB): : L31 - L33
[8] Etch Characteristics of TiO2 Etched by Using an Atomic Layer Etching technique with BCl3 Gas and an Ar Neutral Beam
Park, Jae Beom
Lim, Woong Sun
Park, Sang Duk
Park, Young Jae
Yeom, Geun Young
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (03) : 976 - 980
[9] Low Damage Atomic Layer Etching of ZrO2 by Using BCl3 Gas and Ar Neutral Beam
Lim, W. S.
Park, J. B.
Park, J. Y.
Park, B. J.
Yeom, G. Y.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2009, 9 (12) : 7379 - 7382
[10] Inductively-Coupled BCl3/O2 Plasma Etching of Germanium
Kim, T. S.
Yang, H. Y.
Kil, Y. -H.
Choi, S. S.
Jeong, T. S.
Kang, S.
Shim, K. H.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (05) : 1799 - 1802

← 1 2 3 4 5 →