Photon-induced oxidation of graphene/Ir(111) by SO2 adsorption

被引：5

作者：

Boettcher, Stefan ^{[1
]}

Vita, Hendrik ^{[1
]}

Horn, Karsten ^{[1
]}

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

SURFACE SCIENCE | 2015年 / 641卷

关键词：

Graphene; Graphene oxide; Functionalization; NEXAFS; XPS; ARPES; OXIDE; IR(111); PT(111);

D O I：

10.1016/j.susc.2015.02.003

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We prepare a single layer of graphene oxide by adsorption and subsequent photo-dissociation of SO2 on graphene/Ir(111). Epoxidic oxygen is formed as the main result of this process on graphene, as judged from the appearance of characteristic spectroscopic features in the C 1s and 0 1s core level lines. The different stages of decomposition of SO2 into its photo-fragments are examined during the oxidation process. NEXAFS at the carbon K edge reveals a strong disturbance of the graphene backbone after oxidation and upon SO adsorption. The oxide phase is stable up to room temperature, and is fully reversible upon annealing at elevated temperatures. A band gap opening of 330 +/- 60 meV between the valence and conduction bands is observed in the graphene oxide phase. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：305 / 309

页数：5

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