Self-organization of wire-like InAs nanostructures on InP

被引：20

作者：

Li, HX ^{[1
]}

Zhuang, QD

Kong, XW

Wang, ZG

Daniels-Race, T

机构：

[1] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA

[2] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[3] Yantai Teachers Coll, Yantai 264015, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 205卷 / 04期

基金：

中国国家自然科学基金;

关键词：

quantum wires; InAs/InP; molecular beam epitaxy; self-organization;

D O I：

10.1016/S0022-0248(99)00278-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The initial InAs growth on InP(1 0 0) during molecular beam epitaxy has been investigated. The as-grown islands were shaped like nanowires and formed dense arrays over the entire surface in the 3-6 monolayer InAs deposition range. The wires were oriented along the [(1) over bar 1 0] direction. Transmission electron microscopy images confirm that the wires are coherently grown on the substrates. Our results suggest that the coherent wire-shaped island formation may be a possible method to fabricate self-organized InAs nanowires. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：613 / 617

页数：5

共 8 条

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