4H-SiC bipolar power diodes realized by ion implantation

被引：2

作者：

Lazar, M ^{[1
]}

Planson, D ^{[1
]}

Isoird, K ^{[1
]}

Locatelli, ML ^{[1
]}

Raynaud, C ^{[1
]}

Chante, JP ^{[1
]}

机构：

[1] Inst Natl Sci Appl, CNRS, UMR 5005, CEGELY, F-69621 Villeurbanne, France

来源：

2001 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOL 1 & 2, PROCEEDINGS | 2001年

关键词：

SiC; ion implantation; SIMS; recrystallization; electrical activation; high voltage diode; JTE;

D O I：

10.1109/SMICND.2001.967481

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Physico-chemical and electrical investigations were carried out in 4H-SiC p-type layers created by Aluminum ion implantation at room temperature and high temperature post-implantation annealing. Crystal recovery and dopant preservation after annealing are proved by RBS/C and respectively SIMS measurements. Dopant activation is evaluated by sheet resistance measurements. These results were applied for high voltage bipolar diodes with JTE protection realization.

引用

页码：349 / 352

页数：4

共 6 条

[1] NITROGEN-IMPLANTED SIC DIODES USING HIGH-TEMPERATURE IMPLANTATION [J].

GHEZZO, M ;

BROWN, DM ;

DOWNEY, E ;

KRETCHMER, J ;

HENNESSY, W ;

POLLA, DL ;

BAKHRU, H .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (12) :639-641

[2] Improved annealing process for 6H-SiC p+-n junction creation by Al implantation [J].

Lazar, M ;

Ottaviani, L ;

Locatelli, ML ;

Planson, D ;

Canut, B ;

Chante, JP .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :921-924

[3] Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect [J].

Morvan, E ;

Godignon, P ;

Montserrat, J ;

Fernandez, J ;

Flores, D ;

Millan, J ;

Chante, JP .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3) :218-222

[4]

MORVAN E, MODELISATIN IMPLANTA

[5] POLYTYPE TRANSITIONS IN ION-IMPLANTED SILICON-CARBIDE [J].

PEZOLDT, J ;

KALNIN, AA ;

MOSKWINA, DR ;

SAVELYEV, WD .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 :943-948

[6] Implantation of Al and B acceptors into alpha-SiC and pn junction diodes [J].

Takemura, O ;

Kimoto, T ;

Matsunami, H ;

Nakata, T ;

Watanabe, M ;

Inoue, M .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :701-704

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