Electronic and luminescent properties of Cr-doped cadmium sulfide nanowires

被引：0
作者：
Tang, WH
Fu, XL
Zhang, ZY
Li, LH
机构：
[1] Zhejiang Sci Tech Univ, Dept Phys, Ctr Optoelect Mat & Devices, Hangzhou 310018, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
[3] Univ Dayton, Dept Phys, Dayton, OH 45469 USA
来源：
CHINESE PHYSICS | 2006年 / 15卷 / 04期
关键词：
CdS nanowires; electrical properties; luminescent properties;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Cr-doped CdS nanowires were synthesized in large scale through thermal co-evaporation of CdS and metal Cr powders. General morphology, detailed microstructure and optical properties were characterized using various techniques. Devices consisting of individual Cr-doped CdS nanowire were fabricated and they exhibited remarkable rectifying characteristics. I-V curves of individual Cr-dopcd CdS nanowire devices demonstrate that the present nanowires are n-type doped and have high conductivity (10.96 Omega(-1) cm(-1)), indicating great potential applications in nanoscale electronic and optoelectronic devices.
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收藏
页码：773 / 777
页数：5
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