A capacitive probe with shaped probe bias for ion flux measurements in depositing plasmas

被引：10

作者：

Petcu, M. C. ^{[1
]}

Bronneberg, A. C. ^{[1
]}

Sarkar, A. ^{[1
]}

Blauw, M. A. ^{[2
]}

Creatore, M. ^{[1
]}

van de Sanden, M. C. M. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Holst Ctr, NL-5656 AE Eindhoven, Netherlands

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2008年 / 79卷 / 11期

关键词：

Langmuir probes; plasma materials processing;

D O I：

10.1063/1.3020709

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The application of a pulse shaped biasing method implemented to a capacitive probe is described. This approach delivers an accurate and simple way to determine ion fluxes in diverse plasma mixtures. To prove the reliability of the method, the ion probe was used in a different configuration, namely, a planar Langmuir probe. In this configuration, the ion current was directly determined from the I-V characteristic and compared with the ion current measured with the pulse shaped ion probe. The results from both measurements are in excellent agreement. It is demonstrated that the capacitive probe is able to perform spatially resolved ion flux measurements under high deposition rate conditions (2-20 nm/s) in a remote expanding thermal plasma in Ar/NH(3)/SiH(4) mixture.

引用

页数：4

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