Magnetotransport properties of undoped amorphous carbon films

被引：22

作者：

Wang, Jimin ^{[1
,3
]}

Zhang, Xiaozhong ^{[1
,3
]}

Wan, Caihua ^{[1
,3
]}

Vanacken, Johan ^{[2
]}

Moshchalkou, Victor V. ^{[2
]}

机构：

[1] Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China

[2] Katholieke Univ Leuven, INPAC Inst Nanoscale Phys & Chem, B-3001 Heverlee, Belgium

[3] Tsinghua Univ, Natl Ctr Electron Microscopy Beijing, Beijing 100084, Peoples R China

来源：

CARBON | 2013年 / 59卷

基金：

美国国家科学基金会;

关键词：

MAGNETORESISTANCE; TRANSITION;

D O I：

10.1016/j.carbon.2013.03.019

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Anomalous positive magnetoresistance (MR) up to 36% was observed at 2 K and 12 Tin the undoped amorphous carbon (a-C) film deposited on glass substrate by pulsed laser deposition at 500 degrees C. There is no tendency of saturation of MR with increase of the magnetic field. The MR decreases as the measurement temperature increases from 2 to 80 K, and could hardly be observed above 80 K. As the deposition temperature grows from 300 to 600 C, the disorder degree of the a-C film decreases, and the value of MR also decreases, indicating that the lower disorder degree results in a smaller MR. The mechanism of this MR could be ascribed to the wave function shrinkage. It could help to understand the MR phenomenon in amorphous material systems. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：278 / 282

页数：5

共 26 条

[1] Caihua W, 2011, J APPL PHYS, V109
[2] Disorder, clustering, and localization effects in amorphous carbon
Carey, JD
Silva, SRP
[J]. PHYSICAL REVIEW B, 2004, 70 (23): : 1 - 8
[3] Large positive magnetoresistive effect in silicon induced by the space-charge effect
Delmo, Michael P.
Yamamoto, Shinpei
Kasai, Shinya
Ono, Teruo
Kobayashi, Kensuke
[J]. NATURE, 2009, 457 (7233) : 1112 - U65
[4] Gao X, 2007, APPL PHYS LETT, V91
[5] Gao X, 2007, APPL PHYS LETT, V91
[6] Effect of work function and surface microstructure on field emission of tetrahedral amorphous carbon
Ilie, A
Hart, A
Flewitt, AJ
Robertson, J
Milne, WI
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) : 6002 - 6010
[7] Metal-insulator transition in iodinated amorphous conducting carbon films
Kumari, L
Subramanyam, S
Eto, S
Takai, K
Enoki, T
[J]. CARBON, 2004, 42 (11) : 2133 - 2137
[8] Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells
Lee, CH
Lim, KS
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (01) : 106 - 108
[9] Conductivity and magnetoresistance of FeSi in the Anderson-localized regime
Lisunov, KG
Arushanov, EK
Kloc, C
Broto, J
Leotin, J
Rokoto, H
Respaud, M
Bucher, E
[J]. PHYSICA B, 1996, 229 (01): : 37 - 48
[10] Magnetotransport in the amorphous carbon films prepared from succinic anhydride
Prasad, V
Subramanyam, SV
[J]. PHYSICA B-CONDENSED MATTER, 2005, 369 (1-4) : 168 - 176

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