A 1.2-GIPS/W microprocessor using speed-adaptive threshold-voltage CMOS with forward bias

被引:47
作者
Miyazaki, M [1 ]
Ono, G [1 ]
Ishibashi, K [1 ]
机构
[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
关键词
fluctuation control; forward bias; low-power circuits; microprocessors; substrate bias;
D O I
10.1109/4.982427
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In a speed-adaptive threshold-voltage CMOS (SA-V-t CMOS) scheme, the substrate bias is controlled so that delay in a circuit remains constant. The substrate bias is continuously changed from -1.5 V of reverse bias to 0.5 V of forward bias in order to compensate for fabrication-process fluctuation, supply-voltage variation, and operating-temperature variation. Advantages and disadvantages of substrate bias control with the forward bias are discussed. The SA-V-t CMOS scheme with forward bias is implemented in a 4.3M-transistor microprocessor. The controller occupies 320 x 400 mum in area and consumes 4-mA current. A 0.5-V forward bias raises the maximum operating frequency of the processor by 10%. The processor provides 400 VAX MIPS at 1.5-1.8 V supply with 320-380-mW power dissipation, that is, it achieves 1.2-GIPS/W performance.
引用
收藏
页码:210 / 217
页数:8
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