Properties of fluorine and tin co-doped ZnO thin films deposited by sol-gel method

被引:65
作者
Pan, Zhanchang [1 ]
Zhang, Pengwei [1 ]
Tian, Xinlong [1 ]
Cheng, Guo [1 ]
Xie, Yinghao [1 ]
Zhang, Huangchu [2 ]
Zeng, Xiangfu [2 ]
Xiao, Chumin [1 ]
Hu, Guanghui [1 ]
Wei, Zhigang [1 ]
机构
[1] Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China
[2] Victory Giant Technol Hui Zhou Co Ltd, Huizhou 516083, Peoples R China
基金
中国国家自然科学基金;
关键词
F-Sn co-doped ZnO; Various F concentrations; HRTEM; Optical bandgap; Sol-gel processes; OPTICAL-PROPERTIES; ZINC-OXIDE; TRANSPARENT; PHOTOLUMINESCENCE; AL; NANOSTRUCTURES; TEMPERATURE; NANOWIRES; SUBSTRATE; NANORODS;
D O I
10.1016/j.jallcom.2013.04.132
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Highly transparent and conducting fluorine (F) and tin (Sn) co-doped ZnO (FTZO) thin films were deposited on glass substrates by the sol-gel processing. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) with various F doping concentrations. SEM images showed that the hexagonal ZnO crystals were well-arranged on the glass substrates and the HRTEM images indicated that the individual nanocrystals are highly oriented and exhibited a perfect lattice structure. Owing to its high carrier concentration and mobility, as well as good crystal quality, a minimum resistivity of 1 x 10(-3) - Omega cm was obtained from the FTZO thin film with 3% F doping, and the average optical transmittance in the entire visible wavelength region was higher than 90%. The X-ray photoelectron spectroscopy (XPS) study confirmed the substitution of Zn2+ by Sn ions and Room temperature photoluminescence (PL) observed for pure and FTZO thin films suggested the films exhibit a good crystallinity with a very low defect concentration. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:31 / 37
页数:7
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