Pulse Laser Diode Modules for High-Power, High-Frequency Operation

被引：3

作者：

Veselov, Dmitrii ^{[1
]}

Bobretsova, Yulia ^{[1
]}

Klimov, Aleksandr ^{[1
]}

Bondarev, Aleksandr ^{[1
]}

Lyutetskiy, Andrey ^{[1
]}

Strelets, Vladislav ^{[1
]}

Slipchenko, Sergey ^{[1
]}

Pikhtin, Nikita ^{[1
]}

Kop'ev, Peter S. ^{[1
]}

机构：

[1] Ioffe Inst, 26 Politekhn Skaya, St Petersburg 194021, Russia

来源：

HIGH-POWER DIODE LASER TECHNOLOGY XVIII | 2020年 / 11262卷

基金：

俄罗斯基础研究基金会;

关键词：

semiconductor laser; optical pulses; optical power;

D O I：

10.1117/12.2546313

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The results of research and development of a pulse laser module are presented. The aim was to create and a compact pulse laser source with a peak power of more than 10 W for optical pulses of 10 ns - 10 mu s duration, emitting in spectral range 900-1600 nm. Pulsed modules were based on MOCVD-grown edge-emitting multimode semiconductor lasers integrated with a pulse pumping board. It was shown that the laser output characteristics can be optimized via a series resistance in the laser pump circuit. The 1550 nm wavelength modules with free-space outputs showed power levels of 15 and 25 W, for 1 mu s and 100 ns pulses respectively, at 25 degrees C temperature with a regular pulse shape.

引用

页数：6

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