Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells

被引：5

作者：

Chang, Ching-Wen ^{[1
,2
,3
,4
]}

Wadekar, Paritosh, V ^{[1
,2
]}

Huang, Hui-Chun ^{[5
]}

Chen, Quark Yung-Sung ^{[1
,2
,6
,7
]}

Wu, Yuh-Renn ^{[8
,9
]}

Chen, Ray T. ^{[3
]}

Tu, Li-Wei ^{[1
,2
,10
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Crystal Res, Kaohsiung 80424, Taiwan

[3] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78758 USA

[4] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

[5] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan

[6] Univ Houston, Dept Phys, Houston, TX 77004 USA

[7] Univ Houston, Texas Ctr Superconduct, Houston, TX 77004 USA

[8] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 10617, Taiwan

[9] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[10] Kaohsiung Med Univ, Dept Med Lab Sci & Biotechnol, Kaohsiung 80708, Taiwan

来源：

NANOSCALE RESEARCH LETTERS | 2020年 / 15卷 / 01期

关键词：

III-nitride; Nanorod; Light trapping; Solar cell; Photovoltaic device; Plasma-assisted molecular beam epitaxy; EMITTING-DIODES; MOVPE GROWTH; INGAN; GAN; EFFICIENCY; SIMULATION; INN; LAYER; TEMPERATURE; PERFORMANCE;

D O I：

10.1186/s11671-020-03392-z

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An effective-area photovoltaic efficiency of 1.27% in power conversion, excluding the grid metal contact area and under 1 sun, AM 1.5G conditions, has been obtained for the p-GaN/i-InGaN/n-GaN diode arrays epitaxially grown on (111)-Si. The short-circuit current density is 14.96 mA/cm(2)and the open-circuit voltage is 0.28 V. Enhanced light trapping acquired via multiple reflections within the strain and defect free III-nitride nanorod array structures and the short-wavelength responses boosted by the wide bandgap III-nitride constituents are believed to contribute to the observed enhancements in device performance.

引用

页数：12

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