Excited state absorption in the Si nanocluster-Er material system

被引：10

作者：

Loh, WH ^{[1
]}

Kenyon, AJ

机构：

[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

[2] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 1-4期

基金：

英国工程与自然科学研究理事会;

关键词：

erbium; optical amplifier; silicon nanocrystal;

D O I：

10.1109/LPT.2005.861266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The issue of Er3+ excited state absorption in the Si nanocluster-Er material system is highlighted, and an analysis incorporating this interaction presented. We compare our analysis with a prior model of this material, and with regard to previously reported photoluminescence behavior. We show that excited state absorption can explain behavior that has previously been observed, but had not been satisfactorily accounted for.

引用

页码：289 / 291

页数：3

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