Mechanism of Self-Epitaxy in Buffer Layer for Coated Conductors

被引：7

作者：

Taneda, Takahiro ^{[1
,2
]}

Yoshizumi, Masateru ^{[1
]}

Takahashi, Takahiko ^{[1
]}

Kuriki, Reiji ^{[1
]}

Shinozaki, Takaomi ^{[1
]}

Izumi, Teruo ^{[1
]}

Shiohara, Yuh ^{[1
]}

Iijima, Yasuhiro ^{[3
]}

Saitoh, Takashi ^{[3
]}

Yoshida, Ryuji ^{[4
]}

Kato, Takeharu ^{[4
]}

Hirayama, Tsukasa ^{[4
]}

Kiss, Takanobu ^{[2
]}

机构：

[1] Int Superconduct Technol Ctr ISTEC, SRL, Koto Ku, Tokyo 1350062, Japan

[2] Kyushu Univ, Dept Elect Engn, Nishi Ku, Fukuoka 8190935, Japan

[3] Fujikura Ltd, Sakura, Chiba 2858550, Japan

[4] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 4568587, Japan

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2013年 / 23卷 / 03期

关键词：

CeO2 buffer layer; IBAD; in-plane misorientation angle; self-epitaxy; YBCO coated conductor; PULSED-LASER DEPOSITION; BEAM-ASSISTED DEPOSITION; RADIATION-DAMAGE; TEXTURE DEVELOPMENT; SINGLE-CRYSTALS; THIN-FILMS; MGO; YSZ;

D O I：

10.1109/TASC.2012.2235113

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To elucidate the self-epitaxy mechanism of pulsed-laser deposition-CeO2, a hypothetical relationship with the substrate was derived based on the ion-beam-assisted deposition layer-processing method: the smaller the misorientation angle, the larger the crystallite size. In-plane misorientation angle dependences of crystallite sizes of ion-beam-assisted deposition-MgO and LaMnO3 as substrates for CeO2 deposition, obtained using X-ray diffraction and transmission electron microscopy, indicated that the hypothesis is plausible. This relationship is regarded as a prerequisite for self-epitaxy because large crystallites with small strains would be energetically favorable when CeO2 particles crystallize on them. Eventually, they will grow to dominant grains, which is a possible self-epitaxy mechanism.

引用

页数：5