Fabricating Nanogaps by Nanoskiving

被引:6
作者
Pourhossein, Parisa [1 ,2 ]
Chiechi, Ryan C. [1 ,2 ]
机构
[1] Univ Groningen, Stratingh Inst Chem, NL-9700 AB Groningen, Netherlands
[2] Univ Groningen, Zernike Inst Adv Mat, NL-9700 AB Groningen, Netherlands
来源
JOVE-JOURNAL OF VISUALIZED EXPERIMENTS | 2013年 / 75期
关键词
Chemistry; Issue; 75; Materials Science; Chemical Engineering; Electrical Engineering; Physics; Nanotechnology; nanodevices (electronic); Nanoskiving; nanogaps; nanofabrication; molecular electronics; nanowires; fabrication; etching; ultramicrotome; scanning electron microscopy; SEM; SELF-ASSEMBLED MONOLAYERS; COULOMB-BLOCKADE; NANOSTRUCTURES; ELECTRODES;
D O I
10.3791/50406
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
There are several methods of fabricating nanogaps with controlled spacings, but the precise control over the sub-nanometer spacing between two electrodes-and generating them in practical quantities-is still challenging. The preparation of nanogap electrodes using nanoskiving, which is a form of edge lithography, is a fast, simple and powerful technique. This method is an entirely mechanical process which does not include any photo-or electron-beam lithographic steps and does not require any special equipment or infrastructure such as clean rooms. Nanoskiving is used to fabricate electrically addressable nanogaps with control over all three dimensions; the smallest dimension of these structures is defined by the thickness of the sacrificial layer (Al or Ag) or self-assembled monolayers. These wires can be manually positioned by transporting them on drops of water and are directly electrically-addressable; no further lithography is required to connect them to an electrometer.
引用
收藏
页数:7
相关论文
共 20 条
[1]   COULOMB-BLOCKADE AT 77 K IN NANOSCALE METALLIC ISLANDS IN A LATERAL NANOSTRUCTURE [J].
CHEN, W ;
AHMED, H ;
NAKAZOTO, K .
APPLIED PHYSICS LETTERS, 1995, 66 (24) :3383-3384
[2]  
Hatzor A, 2001, SCIENCE, V291, P1019
[3]   Single-electron transistor of a single organic molecule with access to several redox states [J].
Kubatkin, S ;
Danilov, A ;
Hjort, M ;
Cornil, J ;
Brédas, JL ;
Stuhr-Hansen, N ;
Hedegård, P ;
Bjornholm, T .
NATURE, 2003, 425 (6959) :698-701
[4]   Use of Thin Sectioning (Nanoskiving) to Fabricate Nanostructures for Electronic and Optical Applications [J].
Lipomi, Darren J. ;
Martinez, Ramses V. ;
Whitesides, George M. .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2011, 50 (37) :8566-8583
[5]   Integrated Fabrication and Magnetic Positioning of Metallic and Polymeric Nanowires Embedded in Thin Epoxy Slabs [J].
Lipomi, Darren J. ;
Ilievski, Filip ;
Wiley, Benjamin J. ;
Deotare, Parag B. ;
Loncar, Marko ;
Whitesides, George M. .
ACS NANO, 2009, 3 (10) :3315-3325
[6]   Thiol-containing polymeric embedding materials for nanoskiving [J].
Mays, Robin L. ;
Pourhossein, Parisa ;
Savithri, Dhanalekshmi ;
Genzer, Jan ;
Chiechi, Ryan C. ;
Dickey, Michael D. .
JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (01) :121-130
[7]   Controlled fabrication of metallic electrodes with atomic separation [J].
Morpurgo, AF ;
Marcus, CM ;
Robinson, DB .
APPLIED PHYSICS LETTERS, 1999, 74 (14) :2084-2086
[8]   Fabrication of nano-gap electrodes for measuring electrical properties of organic molecules using a focused ion beam [J].
Nagase, T ;
Kubota, T ;
Mashiko, S .
THIN SOLID FILMS, 2003, 438 :374-377
[9]   Atomic force microscopy lithography as a nanodevice development technique [J].
Notargiacomo, A ;
Foglietti, V ;
Cianci, E ;
Capellini, G ;
Adami, M ;
Faraci, P ;
Evangelisti, F ;
Nicolini, C .
NANOTECHNOLOGY, 1999, 10 (04) :458-463
[10]   Coulomb blockade and the Kondo effect in single-atom transistors [J].
Park, J ;
Pasupathy, AN ;
Goldsmith, JI ;
Chang, C ;
Yaish, Y ;
Petta, JR ;
Rinkoski, M ;
Sethna, JP ;
Abruña, HD ;
McEuen, PL ;
Ralph, DC .
NATURE, 2002, 417 (6890) :722-725