Characteristics of GaN-Based High-Voltage LEDs Compared to Traditional High Power LEDs

被引：15

作者：

Zhan, Teng ^{[1
]}

Zhang, Yang ^{[1
]}

Ma, Jun ^{[1
]}

Tian, Ting ^{[1
]}

Li, Jing ^{[1
]}

Liu, Zhiqiang ^{[1
]}

Yi, Xiaoyan ^{[1
]}

Guo, Jinxia ^{[1
]}

Wang, Guohong ^{[1
]}

Li, Jinmin ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2013年 / 25卷 / 09期

关键词：

Array; efficiency droop; GaN; high-voltage (HV); light emitting diodes (LEDs); EFFICIENCY; DROOP;

D O I：

10.1109/LPT.2013.2251878

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, GaN-based high-voltage light-emitting diodes (HV-LEDs) arrays with 16 microchips connected in series are fabricated. The light output power-current-voltage (LOP-I-V) characteristic of HV-LEDs is measured. Under input power of 1.1 W, the LOP of HV-LEDs is enhanced by 11.9% compared to traditional high power light-emitting diodes (THP-LEDs) with the same chip size. Due to the reduced metal shadow effect and better current spread, the HV-LEDs exhibit higher light extraction efficiency under the same current density, which is simulated by a 3-D ray tracing method. As a result, the luminous efficiency of HV-LEDs is 21.6% higher than that of THP-LEDs under input power of 1.1 W. Furthermore, the efficiency droop of HV-LEDs is reduced to half of that of THP-LEDs.

引用

页码：844 / 847

页数：4

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