XPS analyses of Ta/MgOx/Ni81Fe19/MgOx/Ta films

被引：8
|
作者：
Li, Minghua [1 ]
Han, Gang [1 ]
Liu, Yang [1 ]
Feng, Chun [1 ]
Wang, Haicheng [1 ]
Teng, Jiao [1 ]
Yu, Guanghua [1 ]
机构：
[1] Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 24期
基金：
美国国家科学基金会;
关键词：
Magnetic films; X-ray photoelectron spectroscopy; MgOx; GIANT MAGNETORESISTANCE; SPIN;
D O I：
10.1016/j.apsusc.2012.05.152
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ta/MgOx/Ni81Fe19/MgOx/Ta films were prepared by magnetron sputtering. The anisotropic magnetoresistance (AMR) increases dramatically after annealing. The chemical states of Ta and MgOx at the interface of the NiFe/MgOx/Ta films, which were prepared at the different technological conditions, were analyzed by X-ray photoelectron spectroscopy (XPS). The results show that the AMR of the films is related to the chemical states of MgOx. The chemical states of Mg are different when MgOx is prepared at different technological conditions. Therefore, increasing the AMR is beneficial when more Mg2+ ions are present in the MgOx films. (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码：9589 / 9592
页数：4
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