Investigation of the optical properties of InGaN/GaN nanorods with different indium composition

被引：4

作者：

Wang, Q. ^{[1
]}

Bai, J. ^{[1
]}

Gong, Y. P. ^{[1
]}

Wang, T. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期

基金：

英国工程与自然科学研究理事会;

关键词：

InGaN; nanorods; internal quantum efficiency; photoluminescence; XRD; A-PLANE GAN; RECIPROCAL SPACE; ORIGIN;

D O I：

10.1002/pssc.201100466

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, the optical properties of our nanorod array structures fabricated from InGaN/GaN multiple quantum wells (MQWs) epiwafers with two different kinds of indium compositions have been investigated. The optical performance of our nanorod samples are significantly enhanced compared to the as-grown epiwafers, in particular, such improvement is much more pronounced in the nanorod array structure with a higher indium composition. This is mainly attributed to effective strain relaxation as a result of fabrication into nanorod structure, leading to significant reduction in quantum confined Stark effect (QCSE). X-ray reciprocal space mapping (RSM) measurements have been performed in order to quantitatively evaluate the stain relaxation in the nanorod samples, confirming that the majority of the strain in InGaN/GaN MQWs can be relaxed as a result of fabrication into nanorods. Finally, excitation-power dependant photoluminescence measurements performed at a low temperature also support the conclusion. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：620 / 623

页数：4

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