Nano-cross-junction effect on phonon transport in silicon nanowire cages

被引：118
作者：
Ma, Dengke [1 ,2 ]
Ding, Hongru [1 ,2 ]
Meng, Han [1 ,2 ]
Feng, Lei [3 ]
Wu, Yue [4 ]
Shiomi, Junichiro [3 ,5 ]
Yang, Nuo [1 ,2 ]
机构：
[1] HUST, State Key Lab Coal Combust, Wuhan 430074, Peoples R China
[2] HUST, NICE, Sch Energy & Power Engn, Wuhan 430074, Peoples R China
[3] Univ Tokyo, Dept Mech Engn, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
[4] Shanghai Inst Technol, Sch Chem & Environm Engn, Shanghai 200235, Peoples R China
[5] Natl Inst Mat Sci, Ctr Mat Res Informat Integrat, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan
来源：
PHYSICAL REVIEW B | 2016年 / 94卷 / 16期
基金：
中国国家自然科学基金;
关键词：
THERMAL-CONDUCTIVITY; SIMULATION; FABRICATION; REDUCTION; NANOTUBES; NETWORKS; DYNAMICS;
D O I：
10.1103/PhysRevB.94.165434
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Wave effects of phonons can give rise to controllability of heat conduction in nanostructures beyond that by particle scattering at surfaces and interfaces. In this paper, we propose a new class of three-dimensional nanostructures: a silicon-nanowire-cage (SiNWC) structure consisting of silicon nanowires (SiNWs) connected by nano-cross-junctions. We perform equilibrium molecular dynamics simulations and find an ultralow value of thermal conductivity of SiNWC, 0.173Wm(-1) K-1, which is one order lower than that of SiNWs. By further modal analysis and atomistic Green's function calculations, we identify that the large reduction is due to significant phonon localization induced by the phonon local resonance and hybridization at the junction part in a wide range of phonon modes. This localization effect does not require the cage to be periodic, unlike the phononic crystals, and can be realized in structures that are easier to synthesize, for instance in a form of randomly oriented SiNW network.
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页数：10
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