Non-linear wave mixing in GaAs/InGaAs/InGaP butt-joint diode lasers

被引：14
作者：
Biryukov, AA
Aleshkin, VY
Nekorkin, SM
Kocharovsky, VV [1 ]
Kocharovsky, VV [1 ]
Zvonkov, BN
Scully, MO
机构：
[1] Texas A&M Univ, Dept Phys, College Stn, TX 77843 USA
[2] Texas A&M Univ, Inst Quantum Studies, College Stn, TX 77843 USA
[3] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
[4] Nizhnii Novgorod State Univ, Res Phys Tech Inst, Nizhnii Novgorod 603000, Russia
[5] Russian Acad Sci, Inst Appl Phys, Nizhnii Novgorod 603950, Russia
[6] Princeton Univ, Dept Mech & Aerosp Engn, Princeton, NJ 08544 USA
[7] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA
来源：
JOURNAL OF MODERN OPTICS | 2005年 / 52卷 / 16期
关键词：
D O I：
10.1080/09500340500275553
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We suggest and fabricate butt-joint diode lasers for effcient non-linear wave mixing in semiconductors. The first experimental demonstration of sum-frequency and second harmonic continuous-wave generation in InGaAs/GaAs/InGaP butt-joint diode lasers in the edge-emitting geometry is reported.
引用
收藏
页码：2323 / 2330
页数：8
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