Electromigration Failure Mechanism in Sn-Cu Solder Alloys with OSP Cu Surface Finish

被引：10

作者：

Chu, Ming-Hui ^{[1
]}

Liang, S. W. ^{[1
]}

Chen, Chih ^{[1
]}

Huang, Annie T. ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[2] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2012年 / 41卷 / 09期

关键词：

Electromigration; solder joints; CURRENT-DENSITY; JOINTS; MICROSTRUCTURE; PADS;

D O I：

10.1007/s11664-012-2175-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Organic solderable preservative (OSP) has been adopted as the Cu substrate surface finish in flip-chip solder joints for many years. In this study, the electromigration behavior of lead-free Sn-Cu solder alloys with thin-film under bump metallization and OSP surface finish was investigated. The results showed that severe damage occurred on the substrate side (cathode side), whereas the damage on the chip side (cathode side) was not severe. The damage on the substrate side included void formation, copper dissolution, and formation of intermetallic compounds (IMCs). The OSP Cu interface on the substrate side became the weakest point in the solder joint even when thin-film metallization was used on the chip side. Three-dimensional simulations were employed to investigate the current density distribution in the area between the OSP Cu surface finish and the solder. The results indicated that the current density was higher along the periphery of the bonding area between the solder and the Cu pad, consistent with the area of IMC and void formation in our experimental results.

引用

页码：2502 / 2507

页数：6

共 18 条

[1] Effect of void propagation on bump resistance due to electromigration in flip-chip solder joints using Kelvin structure [J].

Chang, Y. W. ;

Chiang, T. H. ;

Chen, Chih .

APPLIED PHYSICS LETTERS, 2007, 91 (13)

[2] Electromigration enhanced intermetallic growth and void formation in Pb-free solder joints [J].

Chao, Brook ;

Chae, Seung-Hyun ;

Zhang, Xuefeng ;

Lu, Kuan-Hsun ;

Ding, Min ;

Im, Jay ;

Ho, Paul S. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (08)

[3] Electromigration and Thermomigration in Pb-Free Flip-Chip Solder Joints [J].

Chen, Chih ;

Tong, H. M. ;

Tu, K. N. .

ANNUAL REVIEW OF MATERIALS RESEARCH, VOL 40, 2010, 40 :531-555

[4] Electromigration of Sn-8 wt.% Zn-3 wt.% Bi and Sn-9 wt.% Zn-1 wt.% Cu solders [J].

Chen, Chih-ming ;

Hung, Yu-min ;

Lin, Ching-hsuan .

JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 475 (1-2) :238-244

[5] Investigation of void nucleation and propagation during electromigration of flip-chip solder joints using x-ray microscopy [J].

Chiu, S. H. ;

Chen, Chih .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[6] Electromigration on void formation of Sn3Ag1.5Cu FCBGA solder joints [J].

Jen, Ming-Hwa R. ;

Liu, Lee-Cheng ;

Lai, Yi-Shao .

MICROELECTRONICS RELIABILITY, 2009, 49 (07) :734-745

[7] Analysis and experimental verification of the competing degradation mechanisms for solder joints under electron current stressing [J].

Ke, J. H. ;

Yang, T. L. ;

Lai, Y. S. ;

Kao, C. R. .

ACTA MATERIALIA, 2011, 59 (06) :2462-2468

[8] Current density dependence of electromigration-induced flip-chip Cu pad consumption [J].

Lin, C. T. ;

Chuang, Y. C. ;

Wang, S. J. ;

Liu, C. Y. .

APPLIED PHYSICS LETTERS, 2006, 89 (10)

[9] Electromigration of Sn-3Ag-0.5Cu and Sn-3Ag-0.5Cu-0.5Ce-0.2Zn solder joints with Au/Ni(P)/Cu and Ag/Cu pads [J].

Lin, Hsiu-Jen ;

Lin, Jian-Shian ;

Chuang, Tung-Han .

JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 487 (1-2) :458-465

[10] Effect of surface finish on the failure mechanisms of flip-chip solder joints under electromigration [J].

Lin, Y. L. ;

Lai, Y. S. ;

Tsai, C. M. ;

Kao, C. R. .

JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (12) :2147-2153

← 1 2 →