Modified Conductance Method for Extraction of Subgap Density of States in a-IGZO Thin-Film Transistors

被引：30

作者：

Bae, Hagyoul ^{[1
]}

Jun, Sungwoo ^{[1
]}

Jo, Choon Hyeong ^{[1
]}

Choi, Hyunjun ^{[1
]}

Lee, Jaewook ^{[1
]}

Kim, Yun Hyeok ^{[1
]}

Hwang, Seonwook ^{[1
]}

Jeong, Hyun Kwang ^{[1
]}

Hur, Inseok ^{[1
]}

Kim, Woojoon ^{[1
]}

Yun, Daeyoun ^{[1
]}

Hong, Euiyeon ^{[1
]}

Seo, Hyojoon ^{[1
]}

Kim, Dae Hwan ^{[1
]}

Kim, Dong Myong ^{[1
]}

机构：

[1] Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

Amorphous; C-V; conductance; density of states; frequency dispersion; indium-gallium-zinc oxide (IGZO); thin-film transistor (TFT);

D O I：

10.1109/LED.2012.2198870

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a modified conductance method for extraction of the subgap density of states (DOS) in amorphous indium-gallium-zinc oxide thin-film transistors by using the measured capacitance and conductance through the capacitance-voltage (C-V) measurement. In the proposed method, the subgap DOS [g(A)(E)] is extracted from the frequency-dispersive C-V characteristics by localized traps in the active channel region. The extracted g(A)(E) shows a superposition of the exponential tail states and the exponential deep states over the bandgap (N-TA = 3 x 10(18) cm(-3) . eV(-1), N-DA = 2.8 x 10(17) cm(-3) . eV(-1), kT(TA) = 0.04 eV, and kT(DA) = 0.77 eV). We note that the gate-bias-dependent C-free by free electron charges can be separated from C-loc by localized trap charges through the proposed method.

引用

页码：1138 / 1140

页数：3

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