Photocarrier Transport and Carrier Recombination Efficiency in Vertically Aligned Si Nanowire Arrays Synthesized Via Metal-Assisted Chemical Etching

被引：7

作者：

Muldera, Joselito ^{[1
]}

Cabello, Neil Irvin ^{[1
]}

Ragasa, Joseph Christopher ^{[1
]}

Mabilangan, Arvin ^{[1
]}

Balgos, Ma. Herminia ^{[1
]}

Jaculbia, Rafael ^{[1
]}

Somintac, Armando ^{[1
]}

Estacio, Elmer ^{[1
]}

Salvador, Arnel ^{[1
]}

机构：

[1] Univ Philippines, Condensed Matter Phys Lab, Natl Inst Phys, Quezon City 1101, Philippines

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 08期

关键词：

SILICON NANOWIRES;

D O I：

10.7567/APEX.6.082101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The carrier dynamics and recombination characteristics of vertically aligned silicon nanowires are investigated using terahertz emission and photoluminescence spectroscopy, respectively. It is observed that the presence of pores on the walls in two-step-synthesized silicon nanowires greatly affects the carrier dynamics, compared with nanowires synthesized using a one-step process. These pores become efficient carrier recombination sites wherein carriers are collected upon photoexcitation. Additionally, pores effectively diminish the surface electric field thereby inhibiting the terahertz emission. Finally, nanowire-length-dependent terahertz emission is observed only for the one-step-synthesized nanowires whereas the two-step-synthesized nanowire samples exhibited length dependence of their photoluminescence intensity. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 24 条

[1] Confinement in silicon nanowires: Optical properties [J].