Study of microstructural, optical and electrical properties of Mg dopped SnO thin films

被引：26

作者：

Ali, Syed Mansoor ^{[1
,2
]}

Muhammad, Jan ^{[1
]}

Hussain, Syed Tajammul ^{[2
]}

Abu Bakar, Shahzad ^{[2
,3
]}

Ashraf, Muhammad ^{[4
]}

Naeem-ur-Rehman ^{[5
]}

机构：

[1] Islamia Univ Bahalwalpur, Dept Phys, Bahawalpur, Pakistan

[2] Quaid I Azam Univ, Natl Ctr Phys, NS&CD, Islamabad, Pakistan

[3] Quaid I Azam Univ, Dept Chem, Islamabad, Pakistan

[4] Opt Lab Islamabad, Islamabad, Pakistan

[5] Pakistan Inst Engn & Appl Sci, Dept Met & Mat Engn, Islamabad, Pakistan

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 07期

关键词：

TIN OXIDE; OXIDATION;

D O I：

10.1007/s10854-013-1114-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mg doped SnO thin films were fabricated via electron beam evaporator on the glass substrate. The XRD analysis showed that reference and Mg doped SnO thin films were consisted of tetragonal alpha-SnO phase with preferred directions along (101) and (002) orientations. It was observed that the intensity of the diffraction pattern peaks increased and crystallite size decreased with the Mg doping. Scanning electron microscopy showed that the needle-like particles having length in the range of 0.4-0.6 mu m with a diameter of 0.1-0.2 mu m are sintered together to form a compact structure of Sn1-xMgxO layer. In the Raman spectrum, two active mode (A(2u) and E-u) were observed for Sn1-xMgxO thin films. The complex plot (Nyquist plot) showed the data point laying on a single semicircle and the dc resistance increases with the increase of Mg doping concentration.

引用

页码：2432 / 2437

页数：6

共 28 条

[1]

Barsoukov E, 2005, IMPEDANCE SPECTROSCOPY: THEORY, EXPERIMENT, AND APPLICATIONS, 2ND EDITION, P1, DOI 10.1002/0471716243

[2] Synthesis and characterization of nanocrystalline SnO2 and fabrication of lithium cell using nano-SnO2 [J].

Bose, AC ;

Kalpana, D ;

Thangadurai, P ;

Ramasamy, S .

JOURNAL OF POWER SOURCES, 2002, 107 (01) :138-141

[3] Synthesis and characterisation of metal suboxides for gas sensors [J].

Calderer, J ;

Molinàs, P ;

Sueiras, J ;

Llobet, E ;

Vilanova, X ;

Correig, X ;

Masana, F ;

Rodríguez, A .

MICROELECTRONICS RELIABILITY, 2000, 40 (4-5) :807-810

[4] Preparation and optical properties of SnO2/SiO2 nanocomposite [J].

Feng, YS ;

Yao, RS ;

Mang, LD .

CHINESE PHYSICS LETTERS, 2004, 21 (07) :1374-1376

[5] Dye sensitization of nanocrystalline tin oxide by perylene derivatives [J].

Ferrere, S ;

Zaban, A ;

Gregg, BA .

JOURNAL OF PHYSICAL CHEMISTRY B, 1997, 101 (23) :4490-4493

[6]

FLORES AO, 2006, REV MEX FIS, V52, P15

[7] Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing [J].

Fortunato, Elvira ;

Barros, Raquel ;

Barquinha, Pedro ;

Figueiredo, Vitor ;

Park, Sang-Hee Ko ;

Hwang, Chi-Sun ;

Martins, Rodrigo .

APPLIED PHYSICS LETTERS, 2010, 97 (05)

[8] Kinetics of the disproportionation of SnO [J].

Giefers, H ;

Porsch, F ;

Wortmann, G .

SOLID STATE IONICS, 2005, 176 (1-2) :199-207

[9] Microstructure, optical, and electrical properties of p-type SnO thin films [J].

Guo, W. ;

Fu, L. ;

Zhang, Y. ;

Zhang, K. ;

Liang, L. Y. ;

Liu, Z. M. ;

Cao, H. T. ;

Pan, X. Q. .

APPLIED PHYSICS LETTERS, 2010, 96 (04)

[10] New applications of tin oxide gas sensors II. Intelligent sensor system for reliable monitoring of ammonia leakages [J].

Jerger, A ;

Kohler, H ;

Becker, F ;

Keller, HB ;

Seifert, R .

SENSORS AND ACTUATORS B-CHEMICAL, 2002, 81 (2-3) :301-307

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