Characterization of doped TiO2 thin films obtained by pulsed laser deposition

被引：0

作者：

Dobromir, M. ^{[1
]}

Manole, A. -V. ^{[2
]}

Ursu, L. ^{[3
]}

Ursu, C. ^{[3
]}

Neagu, M. ^{[2
]}

Luca, D. ^{[2
]}

机构：

[1] Alexandru Ioan Cuza Univ, Dept Sci, Iasi 700107, Romania

[2] Alexandru Ioan Cuza Univ, Fac Phys, Iasi 700506, Romania

[3] Petru Poni Inst Macromol Chem, Iasi 700487, Romania

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2013年 / 7卷 / 5-6期

关键词：

N-doped TiO2; Pulsed laser deposition; XPS; Ellipsometry; Contact angle; VISIBLE-LIGHT; SURFACE; PHOTOCATALYSIS;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

N-doped TiO2 thin films were synthesized by pulsed laser deposition using a TiO2 target in nitrogen atmosphere and glass slides substrates heated at 250 C. The samples were characterized by atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, ellipsometry and contact angle measurements. The root mean square roughness is increasing with the increase of pulses number. Even if increased surface roughness is known to intensify the hydrophilic behavior of TiO2, the samples do not present the photoinduced superhydrophilic conversion process. The optical constants values are suggesting that the PLD technique is suitable to obtain thin films for optical coatings.

引用

页码：397 / 401

页数：5

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