A SPAD Array Sensor based on Breakdown Pixel Extraction Architecture with Background Readout for Scintillation Detector

被引:0
|
作者
Yang, Xiao [1 ]
Xu, Kai [1 ]
Iizuka, Tetsuya [1 ,2 ]
Nakura, Toru [1 ,2 ]
Zhu, Hongbo [2 ]
Asada, Kunihiro [1 ,2 ]
机构
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Tokyo, Japan
[2] Univ Tokyo, VLSI Design & Educ Ctr, Tokyo, Japan
来源
2017 IEEE SENSORS | 2017年
关键词
single photon avalanche diode; CMOS image sensor; scintillation detector;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposes a SPAD array sensor based on breakdown pixel extraction architecture with background readout for scintillation detectors. The proposed architecture extracts the addresses of only the breakdown pixels during the exposure time of the next frame. Therefore, this sensor minimizes the dead time and improve the readout efficiency. A SPAD array sensor was fabricated in a 0.18 mu m CMOS process. According to the measurement results under the dark condition, the duty cycle of the exposure time is 1.25 times higher than the previous work. This high duty cycle improves the probability to detect the incident photons occurring closely in time and achieves an efficient event detection.
引用
收藏
页码:525 / 527
页数:3
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