Examination of the temperature related structural defects of InGaN/GaN solar cells

被引：10

作者：

Durukan, Ilknur Kars ^{[1
]}

Bayal, Ozlem ^{[2
]}

Kurtulus, Gurkan ^{[2
]}

Bas, Yunus ^{[3
]}

Gultekin, Ali ^{[2
]}

Ozturk, Mustafa Kemal ^{[2
,4
]}

Corekci, Suleyman ^{[5
]}

Tamer, Mehmet ^{[2
,7
]}

Ozcelik, Suleyman ^{[4
]}

Ozbay, Ekmel ^{[6
]}

机构：

[1] Gazi Univ, Life Sci Res & Applicat Ctr, Ankara, Turkey

[2] Gazi Univ, Fac Sci, Dept Phys, Ankara, Turkey

[3] Natl Boron Res Inst, TR-06520 Ankara, Turkey

[4] Gazi Univ, Photon Res Ctr, Ankara, Turkey

[5] Kirklareli Univ, Fac Technol, Energy Syst Engn Dept, Kirklareli, Turkey

[6] Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey

[7] Zirve Univ, Dept Phys, Gaziantep, Turkey

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 86卷

关键词：

InGaN; MOCVD; Annealing; XRD; AFM; GAN FILMS; GROWTH;

D O I：

10.1016/j.spmi.2015.07.061

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this study the effects of the annealing temperature on the InGaN/GaN solar cells with different In-contents grown on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) are analyzed by High Resolution X-ray Diffraction (HRXRD) and an Atomic Force Microscope (AFM). The plane angles, mosaic crystal sizes, mixed stress, dislocation intensities of the structure of the GaN and InGaN layers are determined. According to the test results, there are no general characteristic trends observed due to temperature at both structures. There are fluctuating failures determined at both structures as of 350 degrees C. The defect density increased on the GaN layer starting from 350 degrees C and reaching above 400 degrees C. A similar trend is observed on the InGaN layer, too. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：379 / 389

页数：11

共 26 条

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