1.32-μm GaInNAs-GaAs laser with a low threshold current density

被引：54

作者：

Peng, CS ^{[1
]}

Jouhti, T ^{[1
]}

Laukkanen, P ^{[1
]}

Pavelescu, EM ^{[1
]}

Konttinen, J ^{[1
]}

Li, W ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 03期

基金：

芬兰科学院;

关键词：

1.3-mu m lasers on GaAs; GaInNAs-GaAs; molecular beam epitaxy; ridge-waveguide laser; semiconductor lasers;

D O I：

10.1109/68.986784

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report on a recent development of diluted nitride laser diodes operating at the wavelengths around 1.3 mum. The lasers grown by molecular beam epitaxy and processed into 20-mum-wide ridge waveguide structures, mounted episides up on subcarriers, exhibit a threshold current density as low as 563 A/cm(2), slope efficiency of 0.2 W/A per facet, light power up to 40-mW continuous-wave, and characteristic temperature of 97-133 K.

引用

页码：275 / 277

页数：3

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