High-brightness diode laser arrays integrated with a phase shifter designed for single-lobe far-field pattern

被引：12

作者：

Liu, Lei ^{[1
]}

Zhang, Jianxin ^{[1
]}

Ma, Shaodong ^{[1
]}

Qi, Aiyi ^{[1
]}

Qu, Hongwei ^{[1
]}

Zhang, Yejin ^{[1
]}

Zheng, Wanhua ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

OPTICS LETTERS | 2013年 / 38卷 / 15期

基金：

国家高技术研究发展计划(863计划);

关键词：

EXTERNAL-CAVITY; LOW-DIVERGENCE; HIGH-POWER; NM; ANGLE;

D O I：

10.1364/OL.38.002770

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

High-brightness, edge-emitting diode laser arrays integrated with a phase shifter have been designed and fabricated at a wavelength of about 910 nm. Stable out-of-phase mode is generated through coupling evanescently and converted to be nearly in-phase by the phase modulation from the phase shifter. With a very simple manufacture process, stable single-lobe far-field pattern is achieved in the slow axis when the continuous wave output power exceeds 460 mW/facet, and the divergence angle is only 2.7 times the diffraction-limited value. Such device shows a promising future for high-brightness application with low cost and easy fabrication. (C) 2013 Optical Society of America

引用

页码：2770 / 2772

页数：3

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