Luminescence properties of cerium doped silicon nitride with MgO additive

被引：0

作者：

Ma, Y. Y. ^{[1
]}

Xiao, F. ^{[1
]}

Ye, S. ^{[1
]}

Zhang, Q. Y. ^{[1
]}

机构：

[1] S China Univ Technol, Inst Opt Commun Mat, State Key Lab Luminescence Mat & Devices, Guangzhou 510641, Peoples R China

来源：

PROCEEDINGS OF THE 2013 IEEE 5TH INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) | 2013年

关键词：

White LEDs; silicon nitride; additive; photoluminescence; ENHANCEMENT; PHOSPHORS; EMISSION; PHOTOLUMINESCENCE; SRTIO3-PR3+; IONS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work focuses on the luminescent materials Si3N4:Ce3+ with magnesium oxide additive prepared by the solid-state reaction method. The detailed phase formation was investigated based on X-ray diffraction profiles. The photoluminescence (PL) and photoluminescence excitation (PLE) spectra, the decay lifetime depend on the concentration of doped-Ce3+ ion and MgO additive were investigated. The emission intensity was effectively enhanced approximately 18.7 times ascribing to MgO additive, Si3N4:Ce3+ phosphor shows good absorption in ultraviolet (UV) region and emits broad blue emission, which can he used as a potential candidate for application in phosphor-converted light emitting diodes (LEDs).

引用

页码：459 / 462

页数：4

共 16 条

[1] STRUCTURAL MODIFICATIONS OF SILICON-NITRIDE AS EFFECTED BY TEMPERATURE [J].