Nanocrystalline diamond pn-structure grown by hot-filament CVD

被引：15

作者：

Zimmermann, T

Janischowsky, K

Denisenko, A

Guillén, FJH

Kubovic, M

Gruen, DM

Kohn, E

机构：

[1] Univ Ulm, Dept Electron Devices & Circuits, D-89081 Ulm, Germany

[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

来源：

关键词：

HFCVD; diamond NCD; pn-structure; diode;

D O I：

10.1016/j.diamond.2005.07.025

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A rectifying nanocrystalline diamond (NCD) pri-structure has been grown by Hot-Filament CVD onto a large-area silicon substrate. N-type as well as p-type doping has been realized with this HFCVD process. W-measurements at different temperatures show a diode behavior with an ideality factor of approximately n = 10 and a barrier height for current injection of approximately 0.76 eV CV-plots show a dielectric barrier of 4.2 eV This points towards a complex interface behavior, which is analysed on the basis of highly disordered materials. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：203 / 206

页数：4

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