Thermoelectric properties of Mn doped BiCuSeO

被引:11
作者
Das, Sayan [1 ]
Valiyaveettil, Suneesh Meledath [2 ]
Chen, Kuei-Hsien [2 ]
Suwas, Satyam [3 ]
Mallik, Ramesh Chandra [1 ]
机构
[1] Indian Inst Sci, Thermoelect Mat & Devices Lab, Dept Phys, Bangalore, Karnataka, India
[2] Acad Sinica, Inst Atom & Mol Sci, 1,Sect 4,Roosevelt Rd, Taipei, Taiwan
[3] Indian Inst Sci, Dept Mat Engn, Bangalore 560012, Karnataka, India
关键词
seebeck coefficient; electrical resistivity; thermal conductivity; LOW THERMAL-CONDUCTIVITY; BISMUTH SELENIDE; PERFORMANCE; COPPER;
D O I
10.1088/2053-1591/aaf710
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
BiCuSeO is a promising thermoelectric material having earth-abundant non-toxic constituents and favourable thermoelectric properties like ultra-low thermal conductivity. In this study, Mn+2 has been introduced at the Bi+3 site to increase hole concentration as well as Seebeck coefficient, through aliovalent doping and magnetic impurity incorporation respectively. Samples were prepared through two-step solid state synthesis with the composition Bi1-xMnxCuSeO(x = 0.0, 0.04, 0.06, 0.08, 0.10 and 0.12). X-ray diffraction patterns confirmed the tetragonal (space group: P4/ nmm) crystal structure of BiCuSeO as well as phase purity of the samples. The Seebeck coefficient and electrical resistivity had a decreasing trend with increasing doping fraction owing to the generation of charge carriers. The samples with x = 0.04 and 0.06 showed temperature independent Seebeck coefficient above 523 K, which is a signature of small polaron hopping. While the Seebeck coefficient of the samples with x = 0.08, 0.10 and 0.12 increased above 523 K due to the combination of localized and extended states. The thermal conductivity was dominated by the lattice part of the thermal conductivity. As a result of moderate Seebeck coefficient and low electrical resistivity, the highest power factor of 0.284 mW m(-1)-K-2 was obtained for the Bi Mn-0.92 ( 0.08) CuSeO at 773 K, leading to a maximum zT of 0.4 at 773.
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页数:13
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