Monolithic integration of GaN LEDs with vertical driving MOSFETs by selective area growth and band engineering of the p-AlGaN electron blocking layer though TCAD simulation

被引:8
作者
Lu, Xing [1 ]
Yang, Song [2 ]
Jiang, Huaxing [2 ]
Wu, Jin [1 ]
机构
[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Clear Water Bay, Hong Kong, Peoples R China
关键词
GaN; light emitting diode; metal-oxide-semiconductor field-effect transistor; monolithic integration; band engineering; POLARIZATION;
D O I
10.1088/1361-6641/ab13e1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Based on an InGaN/GaN light emitting diode (LED) structure, monolithically integrated vertical driving metal-oxide-semiconductor field-effect transistors (MOSFETs) were designed and experimentally implemented using a selective area growth (SAG) method. A simple p-GaN/n-GaN stack was selectively regrown on top of the LED wafer to realize an n/p/n structure for the vertical MOSFET fabrication. The integrated vertical MOSFET, which can effectively modulate the injection current through the serially connected LED, exhibited high performance such as an enhancement-mode (E-mode) operation with a relatively high output current density. However, on-resistance (R-ON) degradation was observed in the fabricated vertical MOSFET at a low drain bias level (V-DS < 2 V). Through a 2D TCAD simulation, the origin of the high R-ON was revealed to be an electron barrier induced by the LED's p-AlGaN electron blocking layer (EBL). The simulation results also demonstrated that it can be improved by band engineering of the EBL.
引用
收藏
页数:8
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