Two-Stage Metal-Catalyst-Free Growth of High-Quality Polycrystalline Graphene Films on Silicon Nitride Substrates

被引：119

作者：

Chen, Jianyi ^{[1
]}

Guo, Yunlong ^{[1
]}

Wen, Yugeng ^{[1
]}

Huang, Liping ^{[1
]}

Xue, Yunzhou ^{[1
]}

Geng, Dechao ^{[1
]}

Wu, Bin ^{[1
]}

Luo, Birong ^{[1
]}

Yu, Gui ^{[1
]}

Liu, Yunqi ^{[1
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 07期

基金：

中国国家自然科学基金;

关键词：

two-stage growth; metal-catalyst-free growth; polycrystalline graphene; silicon nitride; CHEMICAL-VAPOR-DEPOSITION; FEW-LAYER GRAPHENE; LARGE-AREA; TRANSISTORS; NUCLEATION;

D O I：

10.1002/adma.201202973

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm2 V-1 s-1, which is about three times the value of those grown on SiO2/Si substrates, and also is better than some examples of metal-catalyzed graphene, reflecting the good quality of the graphene lattice. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：992 / 997

页数：6

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