Two-Stage Metal-Catalyst-Free Growth of High-Quality Polycrystalline Graphene Films on Silicon Nitride Substrates

被引：119
作者：
Chen, Jianyi [1 ]
Guo, Yunlong [1 ]
Wen, Yugeng [1 ]
Huang, Liping [1 ]
Xue, Yunzhou [1 ]
Geng, Dechao [1 ]
Wu, Bin [1 ]
Luo, Birong [1 ]
Yu, Gui [1 ]
Liu, Yunqi [1 ]
机构：
[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China
来源：
ADVANCED MATERIALS | 2013年 / 25卷 / 07期
基金：
中国国家自然科学基金;
关键词：
two-stage growth; metal-catalyst-free growth; polycrystalline graphene; silicon nitride; CHEMICAL-VAPOR-DEPOSITION; FEW-LAYER GRAPHENE; LARGE-AREA; TRANSISTORS; NUCLEATION;
D O I：
10.1002/adma.201202973
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm2 V-1 s-1, which is about three times the value of those grown on SiO2/Si substrates, and also is better than some examples of metal-catalyzed graphene, reflecting the good quality of the graphene lattice. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：992 / 997
页数：6
相关论文
共 42 条
  • [1] Electronic confinement and coherence in patterned epitaxial graphene
    Berger, Claire
    Song, Zhimin
    Li, Xuebin
    Wu, Xiaosong
    Brown, Nate
    Naud, Cecile
    Mayou, Didier
    Li, Tianbo
    Hass, Joanna
    Marchenkov, Atexei N.
    Conrad, Edward H.
    First, Phillip N.
    de Heer, Wait A.
    [J]. SCIENCE, 2006, 312 (5777) : 1191 - 1196
  • [2] Transparent Conductive Graphene Films Synthesized by Ambient Pressure Chemical Vapor Deposition Used as the Front Electrode of CdTe Solar Cells
    Bi, Hui
    Huang, Fuqiang
    Liang, Jun
    Xie, Xiaoming
    Jiang, Mianheng
    [J]. ADVANCED MATERIALS, 2011, 23 (28) : 3202 - +
  • [3] Oxygen-Aided Synthesis of Polycrystalline Graphene on Silicon Dioxide Substrates
    Chen, Jianyi
    Wen, Yugeng
    Guo, Yunlong
    Wu, Bin
    Huang, Liping
    Xue, Yunzhou
    Geng, Dechao
    Wang, Dong
    Yu, Gui
    Liu, Yunqi
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 133 (44) : 17548 - 17551
  • [4] Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene
    Dai, Boya
    Fu, Lei
    Zou, Zhiyu
    Wang, Min
    Xu, Haitao
    Wang, Sheng
    Liu, Zhongfan
    [J]. NATURE COMMUNICATIONS, 2011, 2
  • [5] Boron nitride substrates for high-quality graphene electronics
    Dean, C. R.
    Young, A. F.
    Meric, I.
    Lee, C.
    Wang, L.
    Sorgenfrei, S.
    Watanabe, K.
    Taniguchi, T.
    Kim, P.
    Shepard, K. L.
    Hone, J.
    [J]. NATURE NANOTECHNOLOGY, 2010, 5 (10) : 722 - 726
  • [6] Characterization of Graphene Films and Transistors Grown on Sapphire by Metal-Free Chemical Vapor Deposition
    Fanton, Mark A.
    Robinson, Joshua A.
    Puls, Conor
    Liu, Ying
    Hollander, Matthew J.
    Weiland, Brian E.
    LaBella, Michael
    Trumbull, Kathleen
    Kasarda, Richard
    Howsare, Casey
    Stitt, Joseph
    Snyder, David W.
    [J]. ACS NANO, 2011, 5 (10) : 8062 - 8069
  • [7] The rise of graphene
    Geim, A. K.
    Novoselov, K. S.
    [J]. NATURE MATERIALS, 2007, 6 (03) : 183 - 191
  • [8] Controllable N-Doping of Graphene
    Guo, Beidou
    Liu, Qian
    Chen, Erdan
    Zhu, Hewei
    Fang, Liang
    Gong, Jian Ru
    [J]. NANO LETTERS, 2010, 10 (12) : 4975 - 4980
  • [9] Graphitic carbon growth on Si(111) using solid source molecular beam epitaxy
    Hackley, J.
    Ali, D.
    DiPasquale, J.
    Demaree, J. D.
    Richardson, C. J. K.
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (13)
  • [10] Influence of Copper Morphology in Forming Nucleation Seeds for Graphene Growth
    Han, Gang Hee
    Guenes, Fethullah
    Bae, Jung Jun
    Kim, Eun Sung
    Chae, Seung Jin
    Shin, Hyeon-Jin
    Choi, Jae-Young
    Pribat, Didier
    Lee, Young Hee
    [J]. NANO LETTERS, 2011, 11 (10) : 4144 - 4148
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