The growth of InGaAsP InP MQW layers using a modified vertical LPE system

被引：0

作者：

Oh, SH ^{[1
]}

Hwang, SK ^{[1
]}

Hong, T ^{[1
]}

机构：

[1] Korea Maritime Univ, Dept Elect & Commun Engn, Pusan 606791, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1999年 / 34卷

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A conventional vertical LPE (Liquid Phase Epitaxy) system was modified in order to grow thin MQW (Multiple Quantum Well) layers below 100 Angstrom reproducibly. Although MQW layers were grown by using the modified system, it was difficult to get a reproducible thin layer because of the unstability of solution during growth. To solve this problem, we made a new structure of graphite boat. After growth using it the uniformity of each layer was improved, and also more than 1/2 of growth thickness and 1/3 of thickness deviation could be reduced. Moreover, minimum growth thickness of 60 Angstrom (InGaAsP QW layer) was achieved. It could be-concluded that the unstability of solution affected a reproducible growth of MQW layers.

引用

页码：S474 / S477

页数：4