Studying the formation of self-assembled (In,Mn)As quantum dots

被引:4
作者
Buravlev, A. D. [1 ]
Zaitsev, A. A.
Brunkov, P. N.
Sapega, V. F.
Khrebtov, A. I.
Samsonenko, Yu B.
Cirlin, G. E.
Dubrovskii, V. G.
Ustinov, V. M.
机构
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
基金
俄罗斯基础研究基金会;
关键词
GaAs; Molecular Beam Epitaxy; Atomic Force Microscopy Image; Technical Physic Letter; Reflection High Energy Electron Diffraction;
D O I
10.1134/S1063785012050215
中图分类号
O59 [应用物理学];
学科分类号
摘要
Self-assembled quantum dots (SQDs) based on (In,Mn)As solid solutions have been synthesized by molecular beam epitaxy on GaAs(100) substrates. Examination of the surface morphology of samples by the method of atomic force microscopy showed that the presence of Mn influences the surface density and dimensions of SQDs. The effect of a preliminarily deposited sublayer of Mn atoms on the properties of subsequently grown layers with (In,Mn)As quantum dots has been studied.
引用
收藏
页码:460 / 462
页数:3
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