Study on ICP (inductively coupled plasma) dry etch of DUV MoSiHTPSM

被引：2

作者：

Lee, KY ^{[1
]}

Kim, LJ ^{[1
]}

Nam, KH ^{[1
]}

Park, KT ^{[1
]}

Ku, YM ^{[1
]}

Ku, SS ^{[1
]}

Hur, IB ^{[1
]}

机构：

[1] Dupont Photomasks Inc, Ichon, South Korea

来源：

PHOTOMASK AND X-RAY MASK TECHNOLOGY VI | 1999年 / 3748卷

关键词：

attenuated PSM; DOF margin; ICP dry etch system; pattern side slope; Qz surface damage; trench;

D O I：

10.1117/12.360204

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Attenuated phase shift mask(PSM) have gained wide acceptance in the manufacturing environment during last few years with the advantage of improving DOF margin. However, etching attenuated phase shift film remains a challengeable process that affects several critical mask parameters including critical dimension, side slope and surface damage. In order to select the proper gas mixture condition, we will discuss the results of several experiments, utilizing CHF3 gas mixture, CF4/He/O2 gas mixture and SF6/He gas mixture chemistries. This paper reports the results of etching MoSi attenuated phase shifting materials using an inductively coupled plasma (ICP) system. Qz surface damage and trench for contact pattern is also reviewed as well as performance among those different gas mixture.

引用

页码：158 / 165

页数：4

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