A new cantilever technique reveals spatial distributions of residual stresses in near-surface structures

被引：16

作者：

Massl, S. ^{[1
]}

Keckes, J. ^{[2
]}

Pippan, R. ^{[1
]}

机构：

[1] Austrian Acad Sci, Erich Schmid Inst Festkorperphys, A-8700 Leoben, Austria

[2] Univ Min & Met Leoben, Dept Mat Phys, A-8700 Leoben, Austria

来源：

SCRIPTA MATERIALIA | 2008年 / 59卷 / 05期

基金：

奥地利科学基金会;

关键词：

thin film; residual stresses; ion beam processing; 3-D ILR method;

D O I：

10.1016/j.scriptamat.2008.04.037

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A focused ion beam technique that allows the characterization of spatial residual stresses in near-surface structures with a depth resolution on the nanoscale and a lateral resolution in the micron range is introduced. It is based on the fabrication of a micro-cantilever and the gradual removal of the residually stressed material, which leads to a change in the measured deflection. The method is presented by determining a spatial stress distribution around a scratch in an 840 nm thin Ni film on Si. (c) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：503 / 506

页数：4

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