Impact of Transistor Aging Effects on Sense Amplifier Reliability in Nano-Scale CMOS

被引：0

作者：

Menchaca, Roberto ^{[1
]}

Mahmoodi, Hamid ^{[1
]}

机构：

[1] San Francisco State Univ, Sch Engn, San Francisco, CA 94132 USA

来源：

2012 13TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ISQED) | 2012年

关键词：

NBTI; DEGRADATION;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Bias temperature instability (among other problems) is a key reliability issue with nanoscale CMOS transistors. Especially in sensitive circuits such as sense amplifiers of SRAM arrays, transistor aging may significantly increase the probability of failure. By analyzing the Current Based Sense Amplifier circuit and Voltage-Latched Sense Amplifier circuit through HSPICE simulations, we observe that under the effects of Negative Bias Temperature Instability (NBTI) aging alone, the failure probability increases for both circuits. However, under Positive Bias Temperature Instability (PBTI) only or the combined effects of both NBTI and PBTI, failure probability reduces over time.

引用

页码：342 / 346

页数：5