Understanding of air influenced poly (3-hexylthiophene) film characteristics in a transistor structure

被引：0

作者：

Jung, Ji-Hoon ^{[1
]}

Zhang, Xue ^{[2
]}

Park, Jaehoon ^{[2
]}

Bae, Jin-Hyuk ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn, Daegu 702701, South Korea

[2] Hallym Univ, Dept Elect Engn, 1 Hallymdaehak Gil, Chunchon 200702, Gangwon Do, South Korea

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2016年 / 635卷 / 01期

关键词：

Poly (3-hexylthiophene); air exposure time; thin-film; transistor; FIELD-EFFECT TRANSISTORS; CONJUGATED POLYMERS; POLY(3-HEXYLTHIOPHENE); OXYGEN;

D O I：

10.1080/15421406.2016.1200358

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This study presents the air influenced electrical properties of poly (3-hexylthiophene) (P3HT) film in a transistor structure. In order to observe the effect of air exposure on P3HT films, the current-voltage characteristics of P3HT-based organic thin-film transistors (OTFTs) were obtained by increasing the air-exposure time. Upon increasing the air exposure time up to 92h, the drain current in the saturation region increased, and a positive shift of the threshold voltage was observed. On the other hand, a decrease in the drain current and a negative shift of the threshold voltage were observed after 92h. A simple theoretical approximation based on carrier doping and scattering effect describes the relationship between electrical performance of P3HT films and air exposure time.

引用

页码：74 / 79

页数：6

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