Test and Analysis of the ESD Robustness for the Diode-Connected a-IGZO Thin Film Transistors

被引：11
|
作者：
Tai, Ya-Hsiang [1 ,2 ]
Chiu, Hao-Lin [1 ,3 ]
Chou, Lu-Sheng [1 ,3 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Display Inst, Hsinchu 30010, Taiwan
[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
来源：
JOURNAL OF DISPLAY TECHNOLOGY | 2013年 / 9卷 / 08期
关键词：
Amorphous Indium-Gallium-Zinc Oxide thin film transistor (a-IGZO TFT); electrostatic discharge (ESD); PERFORMANCE; DESIGN;
D O I：
10.1109/JDT.2013.2257680
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, wafer level TLP testing is applied to amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) to study the factors of their electrostatic discharge (ESD) robustness. Two kinds of TFTs with N2O and O-2 treatments are subject to the ESD test. It is found that the contact resistance of the TFTs, instead of the channel quality, dominates the ESD power for them to be damaged.
引用
收藏
页码：613 / 618
页数：6
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