Pulse generation at 346 GHz using a passively mode locked quantum-dash-based laser at 1.55 μm

被引：71
作者：
Merghem, K. [1 ]
Akrout, A. [1 ]
Martinez, A. [1 ]
Aubin, G. [1 ]
Ramdane, A. [1 ]
Lelarge, F. [2 ]
Duan, G. -H. [2 ]
机构：
[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
[2] Alcatel Thales III V Lab, F-91460 Marcoussis, France
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 02期
关键词：
III-V semiconductors; indium compounds; laser beams; laser mode locking; optical pulse generation; SEMICONDUCTOR-LASERS; DOT LASERS;
D O I：
10.1063/1.3070544
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on subpicosecond pulse generation at 346 GHz repetition rate based on InAs/InP quantum dash passively mode locked lasers emitting at 1.55 mu m. This is achieved owing to the high optical modal gain of the multilayer InAs/InP quantum dash active region.
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页数：3
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