Pulse generation at 346 GHz using a passively mode locked quantum-dash-based laser at 1.55 μm

被引：72

作者：

Merghem, K. ^{[1
]}

Akrout, A. ^{[1
]}

Martinez, A. ^{[1
]}

Aubin, G. ^{[1
]}

Ramdane, A. ^{[1
]}

Lelarge, F. ^{[2
]}

Duan, G. -H. ^{[2
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[2] Alcatel Thales III V Lab, F-91460 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 02期

关键词：

III-V semiconductors; indium compounds; laser beams; laser mode locking; optical pulse generation; SEMICONDUCTOR-LASERS; DOT LASERS;

D O I：

10.1063/1.3070544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on subpicosecond pulse generation at 346 GHz repetition rate based on InAs/InP quantum dash passively mode locked lasers emitting at 1.55 mu m. This is achieved owing to the high optical modal gain of the multilayer InAs/InP quantum dash active region.

引用

页数：3

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