In induced reconstructions of Si(111) as superlattice matched epitaxial templates for InN growth

被引：3
作者：
Kuyyalil, Jithesh [2 ]
Tangi, Malleswararao [1 ]
Shivaprasad, S. M. [1 ]
机构：
[1] Jawaharlal Nehru Ctr Adv Sci Res, Bangalore 560064, Karnataka, India
[2] INSA, UMR 6082, FOTON, F-35708 Rennes, France
来源：
MATERIALS RESEARCH BULLETIN | 2013年 / 48卷 / 02期
关键词：
Interfaces; Surfaces; Semiconductors; Epitaxial growth; X-ray diffraction; Crystal structure; Electrical properties; Optical properties; ALN BUFFER LAYER; MOLECULAR-BEAM EPITAXY; BAND-GAP;
D O I：
10.1016/j.materresbull.2012.10.011
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium induced surface reconstructions of Si(1 1 1)-7 x 7 are used as templates to grow high quality InN. We grow InN on Si(1 1 1)-7 x 7, Si(1 1 1)-4 x 1-In and Si(1 1 1)-1 x 1-In reconstructed surfaces and study the quality of the films formed using complementary characterization tools. InN grown on Si(1 1 1)-1 x 1-In reconstruction shows superior film quality with lowest band-edge emission having a narrow full width at half maximum, intense and narrow 0 0 0 2 X-ray diffraction, low surface roughness and carrier concentration an order lower than other samples. We attribute the high quality of the film formed at 300 degrees C to the integral matching of InN and super lattice dimensions, we also study the reasons for the band gap variation of InN in the literature. Present study demonstrates the proposed Superlattice Matched Epitaxy can be a general approach to grow good quality InN at much lower growth temperature on compatible In induced reconstructions of the Si surface. (c) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：256 / 259
页数：4
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