Thermal phenomena in acrylic 193 nm resists

被引：7

作者：

Paniez, PJ ^{[1
]}

Gally, S ^{[1
]}

Mortini, B ^{[1
]}

Rosilio, C ^{[1
]}

Sassoulas, PO ^{[1
]}

Dammel, R ^{[1
]}

Padmanaban, M ^{[1
]}

Klauck-Jacobs, A ^{[1
]}

Oberlander, J ^{[1
]}

机构：

[1] France Telecom, CNET Grenoble, DTM, TFM, F-38243 Meylan, France

来源：

MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2 | 1999年 / 3678卷

关键词：

D O I：

10.1117/12.350189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A combination of methods has been applied to determine the glass transition and decomposition temperatures for several series of methacrylic copolymers used in commercial 193 nm resists as a function of the environment experienced by the protective group. The deprotection of the MAdMA and MLMA monomers which are the basis of the commercial AZ(R)EXP AX-1000P system is not appreciably catalyzed by the presence of MAA comonomers, leading to the conclusion that there is no autocatalytic effect in the deprotection of photoresists using these groups. AZ(R)EXP AX1000P is found to have a high Tg of about 154 degrees C, which is corroborated by thermal flow measurements of developed resist features. Due to a decomposition process initiated by one of the other resist components, the formulation is presently not of the annealing type.

引用

页码：1352 / 1363

页数：12

共 50 条

[31] CONTROLLED-AMBIENT PHOTOLITHOGRAPHY OF POLYSILANE RESISTS AT 193 NM [J].

KUNZ, RR ;

ROTHSCHILD, M ;

EHRLICH, DJ ;

SAWAN, SP ;

TSAI, YG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1629-1633

[32] Etch properties of 193nm resists: Issues and approaches [J].

Padmanaban, M ;

Alemy, E ;

Dammel, R ;

Kim, WK ;

Kudo, T ;

Lee, S ;

Rahman, D ;

Chen, WL ;

Sadjadi, RM ;

Livesay, W ;

Ross, M .

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2002, 15 (03) :521-527

[33] Creating 193 nm immersion resists with embedded top barriers [J].

Wang, Deyan ;

Xu, Chengbai ;

Caporale, Stefan ;

Trefonas, Peter .

SOLID STATE TECHNOLOGY, 2007, 50 (09) :50-+

[34] Characterization of 193nm resists for optical mask manufacturing [J].

Fosshaug, H ;

Paulsson, A ;

Berzinsh, U ;

Magnusson, H .

24TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PT 1 AND 2, 2004, 5567 :1256-1267

[35] Extensive thermal characterization of advanced resists by Modulated Temperature DSC (MT-DSC): Application to acrylate based 193 nm resists [J].

Paniez, PJ ;

Guinot, JA ;

Mortini, B ;

Rosilio, C .

MICROELECTRONIC ENGINEERING, 1998, 42 :367-370

[36] Environmental stability of 193 nm single layer chemically amplified resists [J].

J Vac Sci Technol B, 1 (101)

[37] Novel silicon-containing resists for EUV and 193 nm lithography [J].

Kessel, CR ;

Boardman, LD ;

Rhyner, SJ ;

Cobb, JL ;

Henderson, CC ;

Rao, V ;

Okoroanyanwu, U .

MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 :214-220

[38] Characteristics of low Ea 193-nm chemical amplification resists [J].

Ogata, Toshiyuki ;

Kinoshita, Yohei ;

Furuya, Sanae ;

Matsumaru, Shogo ;

Takahashi, Motoki ;

Shiono, Daiju ;

Dazai, Takahiro ;

Hada, Hideo ;

Shirai, Masamitsu .

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 :U813-U824

[39] Acid amplification of chemically amplified resists for 193nm lithography [J].

Ohfuji, T ;

Takahashi, M ;

Kuhara, K ;

Ogawa, T ;

Ohtsuka, H ;

Sasago, M ;

Ichimura, K .

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV, 1997, 3049 :76-82

[40] Thin bilayer resists approach for 193nm and future photolithography [J].

Hishiro, Yoshi ;

Hyatt, Michael .

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 :U1154-U1163

← 1 2 3 4 5 →