Thermal phenomena in acrylic 193 nm resists

被引:7
|
作者
Paniez, PJ [1 ]
Gally, S [1 ]
Mortini, B [1 ]
Rosilio, C [1 ]
Sassoulas, PO [1 ]
Dammel, R [1 ]
Padmanaban, M [1 ]
Klauck-Jacobs, A [1 ]
Oberlander, J [1 ]
机构
[1] France Telecom, CNET Grenoble, DTM, TFM, F-38243 Meylan, France
来源
MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2 | 1999年 / 3678卷
关键词
D O I
10.1117/12.350189
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A combination of methods has been applied to determine the glass transition and decomposition temperatures for several series of methacrylic copolymers used in commercial 193 nm resists as a function of the environment experienced by the protective group. The deprotection of the MAdMA and MLMA monomers which are the basis of the commercial AZ(R)EXP AX-1000P system is not appreciably catalyzed by the presence of MAA comonomers, leading to the conclusion that there is no autocatalytic effect in the deprotection of photoresists using these groups. AZ(R)EXP AX1000P is found to have a high Tg of about 154 degrees C, which is corroborated by thermal flow measurements of developed resist features. Due to a decomposition process initiated by one of the other resist components, the formulation is presently not of the annealing type.
引用
收藏
页码:1352 / 1363
页数:12
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