Giant magnetoelectric effect in perpendicularly magnetized Pt/Co/Ta ultrathin films on a ferroelectric substrate

被引:14
作者
Chen, Aitian [1 ]
Huang, Haoliang [2 ]
Wen, Yan [1 ]
Liu, Wenyi [2 ]
Zhang, Senfu [1 ]
Kosel, Jurgen [3 ]
Sun, Weideng [4 ,5 ]
Zhao, Yonggang [4 ,5 ]
Lu, Yalin [2 ]
Zhang, Xi-Xiang [1 ]
机构
[1] King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia
[2] Univ Sci & Technol China, Anhui Lab Adv Photon Sci & Technol, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
[3] King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn Div, Thuwal 239556900, Saudi Arabia
[4] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[5] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
SPIN REORIENTATION TRANSITION; VOLTAGE CONTROL; ANISOTROPY; ORBIT;
D O I
10.1039/d0mh00796j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Perpendicularly magnetized layers are essential for information storage to increase the storage density. Modulating perpendicular magnetization by an electric field offers a promising solution to lower energy consumption. Here, we demonstrate a remarkable electric field modulation of perpendicular magnetization in perpendicularly magnetized Pt/Co/Ta ultrathin films on a ferroelectric substrate. By measuring the anomalous Hall effect under in situ electric fields, we observe a giant magnetoelectric effect with the large converse magnetoelectric coefficient of -2.1 x 10(-6) s m(-1) at H-perpendicular to = -20 Oe and -0.9 x 10(-6) s m(-1) at H-perpendicular to = 0 Oe, which is comparable to that in multiferroic heterostructures with in-plane magnetization. Additionally, Kerr imaging shows that electric fields observably affect magnetic domain structures of the Pt/Co/Ta ultrathin films indicating a giant magnetoelectric effect. We further measure in situ X-ray diffraction and X-ray reflectivity with electric fields, which suggests that this giant magnetoelectric effect is attributed to strain-mediated magnetoelectric coupling and is closely related to electric-field-varied interface roughness. Our findings highlight the role of interface roughness in exploring electrical control of perpendicular magnetization.
引用
收藏
页码:2328 / 2335
页数:8
相关论文
共 35 条
  • [31] Reversible Modification of Ferromagnetism through Electrically Controlled Morphology
    Vinai, Giovanni
    Motti, Federico
    Bonanni, Valentina
    Petrov, Aleksander Yu
    Benedetti, Stefania
    Rinaldi, Christian
    Stella, Mattia
    Cassese, Damian
    Prato, Stefano
    Cantoni, Matteo
    Rossi, Giorgio
    Panaccione, Giancarlo
    Torelli, Piero
    [J]. ADVANCED ELECTRONIC MATERIALS, 2019, 5 (07):
  • [32] Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin-orbit and spin-transfer torques
    Wang, Mengxing
    Cai, Wenlong
    Zhu, Daoqian
    Wang, Zhaohao
    Kan, Jimmy
    Zhao, Zhengyang
    Cao, Kaihua
    Wang, Zilu
    Zhang, Youguang
    Zhang, Tianrui
    Park, Chando
    Wang, Jian-Ping
    Fert, Albert
    Zhao, Weisheng
    [J]. NATURE ELECTRONICS, 2018, 1 (11): : 582 - 588
  • [33] Voltage Control of Perpendicular Magnetic Anisotropy in Multiferroic (Co/Pt)3/PbMg1/3Nb2/3O3-PbTiO3 Heterostructures
    Yang, Qu
    Nan, Tianxiang
    Zhang, Yijun
    Zhou, Ziyao
    Peng, Bin
    Ren, Wei
    Ye, Zuo-Guang
    Sun, Nian X.
    Liu, Ming
    [J]. PHYSICAL REVIEW APPLIED, 2017, 8 (04):
  • [34] Strain-induced modulation of perpendicular magnetic anisotropy in Ta/CoFeB/MgO structures investigated by ferromagnetic resonance
    Yu, Guoqiang
    Wang, Zhenxing
    Abolfath-Beygi, Maryam
    He, Congli
    Li, Xiang
    Wong, Kin L.
    Nordeen, Paul
    Wu, Hao
    Carman, Gregory P.
    Han, Xiufeng
    Alhomoudi, Ibrahim A.
    Amiri, Pedram Khalili
    Wang, Kang L.
    [J]. APPLIED PHYSICS LETTERS, 2015, 106 (07)
  • [35] Lowering critical current density for spin-orbit torque induced magnetization switching by ion irradiation
    Yun, Jijun
    Zuo, Yalu
    Mao, Jian
    Chang, Meixia
    Zhang, Shengxia
    Liu, Jie
    Xi, Li
    [J]. APPLIED PHYSICS LETTERS, 2019, 115 (03)