Giant magnetoelectric effect in perpendicularly magnetized Pt/Co/Ta ultrathin films on a ferroelectric substrate

被引:14
作者
Chen, Aitian [1 ]
Huang, Haoliang [2 ]
Wen, Yan [1 ]
Liu, Wenyi [2 ]
Zhang, Senfu [1 ]
Kosel, Jurgen [3 ]
Sun, Weideng [4 ,5 ]
Zhao, Yonggang [4 ,5 ]
Lu, Yalin [2 ]
Zhang, Xi-Xiang [1 ]
机构
[1] King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia
[2] Univ Sci & Technol China, Anhui Lab Adv Photon Sci & Technol, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
[3] King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn Div, Thuwal 239556900, Saudi Arabia
[4] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[5] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
SPIN REORIENTATION TRANSITION; VOLTAGE CONTROL; ANISOTROPY; ORBIT;
D O I
10.1039/d0mh00796j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Perpendicularly magnetized layers are essential for information storage to increase the storage density. Modulating perpendicular magnetization by an electric field offers a promising solution to lower energy consumption. Here, we demonstrate a remarkable electric field modulation of perpendicular magnetization in perpendicularly magnetized Pt/Co/Ta ultrathin films on a ferroelectric substrate. By measuring the anomalous Hall effect under in situ electric fields, we observe a giant magnetoelectric effect with the large converse magnetoelectric coefficient of -2.1 x 10(-6) s m(-1) at H-perpendicular to = -20 Oe and -0.9 x 10(-6) s m(-1) at H-perpendicular to = 0 Oe, which is comparable to that in multiferroic heterostructures with in-plane magnetization. Additionally, Kerr imaging shows that electric fields observably affect magnetic domain structures of the Pt/Co/Ta ultrathin films indicating a giant magnetoelectric effect. We further measure in situ X-ray diffraction and X-ray reflectivity with electric fields, which suggests that this giant magnetoelectric effect is attributed to strain-mediated magnetoelectric coupling and is closely related to electric-field-varied interface roughness. Our findings highlight the role of interface roughness in exploring electrical control of perpendicular magnetization.
引用
收藏
页码:2328 / 2335
页数:8
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