A Robust One-Shot Switch for High-Power Pulse Applications

被引：34
作者：
Baginski, Thomas A. [1 ]
Thomas, Keith A. [2 ]
机构：
[1] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA
[2] USAF Eglin AFB, Ft Walton Beach, FL 32542 USA
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2009年 / 24卷 / 1-2期
关键词：
High speed; high-voltage switch; low parasitic impedance; low turn-on voltage; MODEL; OPTIMIZATION; DEVICE; IGBTS;
D O I：
10.1109/TPEL.2008.2005411
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-voltage switches capable of operating at high speeds and over a wide range of voltages and energies are used in a wide variety of applications in material science and plasma physics. This paper discusses the fabrication and characterization of a novel high-voltage shock switch. The structure has been designed to operate as a fast-turn-on, low-impedance device. The switch is a planar structure that allows for direct integration into the stripline geometries used in a conventional capacitive discharge unit.
引用
收藏
页码：253 / 259
页数：7
相关论文
共 26 条
[1]  
ALEXANDROVA L, 1996, ENCY CHEM TECHNOLOGY
[2]   The current sharing optimization of paralleled IGBTs in a power module tile using a PSpice frequency dependent impedance model [J].
Azar, Ramy ;
Udrea, Florin ;
Ng, Wai Tung ;
Dawson, Francis ;
Findlay, William ;
Waind, Peter .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2008, 23 (01) :206-217
[3]  
Baginski T. A., 1992, U. S. Patent, Patent No. [5 085 146, 5085146]
[4]   THE SEMICONDUCTOR JUNCTION IGNITER - A NOVEL RF AND ESD INSENSITIVE ELECTROEXPLOSIVE DEVICE [J].
BAGINSKI, TA ;
HODEL, AS .
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 1993, 29 (02) :412-418
[5]   A high-voltage single-shot switch implemented with a MOSFET current source and avalanche diode [J].
Baginski, TA ;
Thomas, KA ;
Smith, SL .
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 1997, 44 (02) :167-172
[6]   Experimental analysis of punch-through conditions in power P-I-N diodes [J].
Ben Salah, Tarek ;
Buttay, Cyril ;
Allard, Bruno ;
Morel, Herve ;
Ghedira, Sami ;
Besbes, Kamel .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2007, 22 (01) :13-20
[7]   Physical modeling of fast p-i-n diodes with carrier lifetime zoning, part I: Device model [J].
Bryant, Angus T. ;
Lu, Liqing ;
Santi, Enrico ;
Palmer, Patrick R. ;
Hudgins, Jerry L. .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2008, 23 (01) :189-197
[8]   Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and PIN diode models [J].
Bryant, AT ;
Kang, XS ;
Santi, E ;
Palmer, PR ;
Hudgins, JL .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2006, 21 (02) :295-309
[9]  
CAMPBELL SA, 1997, SCI ENG MICROELECTRO
[10]   Design of gradient oxide-bypassed superjunction power MOSFET devices [J].
Chen, Yu ;
Liang, Yung C. ;
Samudra, Ganesh S. .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2007, 22 (04) :1303-1310
123